Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("Dispositif à mémoire")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 1721

  • Page / 69
Export

Selection :

  • and

Double Patterning Technology : Process-Window Analysis in a Many-Dimensional SpaceSEZGINER, Apo; YENIKAYA, Bayram; STAUD, Wolfgang et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66072S.1-66072S.9, issn 0277-786X, isbn 978-0-8194-6745-4Conference Paper

International Conference on Memory Technology 2007VAN HOUDT, Jan.Solid-state electronics. 2008, Vol 52, Num 4, pp 549-595, issn 0038-1101, 46 p.Conference Paper

Memristors: Devices, Models & ApplicationsMAZUMDER, Pinaki; KANG, Sung Mo; WASER, Rainer et al.Proceedings of the IEEE. 2012, Vol 100, Num 6, issn 0018-9219, 172 p.Serial Issue

Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronicsWESSELY, Pia Juliane; SCHWALKE, Udo.Applied surface science. 2014, Vol 291, pp 83-86, issn 0169-4332, 4 p.Conference Paper

Steady periodic memristor oscillator with transient chaotic behavioursBAO, B. C; LIU, Z; XU, J. P et al.Electronics letters. 2010, Vol 46, Num 3, pp 228-230, issn 0013-5194, 3 p.Article

Special Issue Devoted to the 2nd International Memory Workshop (IMW 2010)DELERUYELLE, Damien; IANNACCONE, Giuseppe.Solid-state electronics. 2011, Vol 58, Num 1, issn 0038-1101, 97 p.Serial Issue

Mutator for transforming memristor into memcapacitorBIOLEK, D; BIOLKOVA, V.Electronics letters. 2010, Vol 46, Num 21, pp 1428-1429, issn 0013-5194, 2 p.Article

Double patterning technology : Process-window analysis in a many-dimensional spaceSEZGINER, Apo; YENIKAYA, Bayram.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 652113.1-652113.9, issn 0277-786X, isbn 978-0-8194-6640-2Conference Paper

Two memristors suffice to compute all Boolean functionsLEHTONEN, E; POIKONEN, J. H; LAIHO, M et al.Electronics letters. 2010, Vol 46, Num 3, pp 230-231, issn 0013-5194, 2 p.Article

Stabilizing the forming process in unipolar resistance switching using an improved compliance current limiterLEE, S. B; CHANG, S. H; YOO, H. K et al.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 48, issn 0022-3727, 485103.1-485103.4Article

WIPS: a write-in-place snapshot file system for storage-class memoryLEE, E; YOO, S; JANG, J et al.Electronics letters. 2012, Vol 48, Num 17, pp 1053-1054, issn 0013-5194, 2 p.Article

Flexible mask specificationsNOJIMA, Shigeki; MIMOTOGI, Shoji; ITOH, Masamitsu et al.SPIE proceedings series. 2002, pp 33-42, isbn 0-8194-4517-7, 10 p.Conference Paper

Retention loss characteristics of localized charge-trapping devicesLUSKY, Eli; SHACHAM-DIAMAND, Yossi; SHAPPIR, Assaf et al.IEEE international reliability physics symposium. 2004, pp 527-530, isbn 0-7803-8315-X, 1Vol, 4 p.Conference Paper

Superconducting quantum storage and processingAMIN, M. H. S; GRAJCAR, M; IL'ICHEV, E et al.IEEE International Solid-State Circuits Conference. 2004, pp 296-297, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

Bias-dependent charge accumulation in pentacene-based thin-film transistorsLIN, Chi-Feng; CHUANG, Kai-Hsiang; CHEN, Yet-Min et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63361F.1-63361F6, issn 0277-786X, isbn 0-8194-6415-5, 1VolConference Paper

Electrohydrodynamic printed TiO2 flexible memory device ― fabrication and characterisationRAHMAN, K; MUSTAFA, M; MUHAMMAD, N. M et al.Electronics letters. 2012, Vol 48, Num 20, pp 1261-1263, issn 0013-5194, 3 p.Article

Memristive and Resistive Devices and SystemsCHEN, D. M; CHUA, L. O; HWANG, C. S et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 102, Num 4, issn 0947-8396, 274 p.Serial Issue

Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash® memory cellZIGUI CAO; BO ZHANG; XIONG ZHANG et al.Microelectronics and reliability. 2008, Vol 48, Num 11-12, pp 1809-1814, issn 0026-2714, 6 p.Article

The study of CD behavior due to transmission control position change within photomask substrateKIM, Munsik; LEE, Hyemi; WOO, Sungha et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7122, issn 0277-786X, isbn 978-0-8194-7355-4 0-8194-7355-3, 712239.1-712239.7, 2Conference Paper

Multi-bit storage through Si nanocrystals embedded in SiO2LOMBARDO, S; CORSO, D; CRUPI, I et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 411-414, issn 0167-9317, 4 p.Conference Paper

A Memristor Device ModelYAKOPCIC, Chris; TAHA, Tarek M; SUBRAMANYAM, Guru et al.IEEE electron device letters. 2011, Vol 32, Num 10, pp 1436-1438, issn 0741-3106, 3 p.Article

RESET Mechanism of TiOx Resistance-Change Memory DeviceWEI WANG; FUJITA, Shinobu; SIMON WONG, S et al.IEEE electron device letters. 2009, Vol 30, Num 7, pp 733-735, issn 0741-3106, 3 p.Article

Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layerSARGENTIS, Ch; GIANNAKOPOULOS, K; TRAVLOS, A et al.Surface science. 2007, Vol 601, Num 13, pp 2859-2863, issn 0039-6028, 5 p.Conference Paper

Two-Step Write Scheme for Reducing Sneak-Path Leakage in Complementary Memristor ArrayJUNG, Chul-Moon; CHOI, Jun-Myung; MIN, Kyeong-Sik et al.IEEE transactions on nanotechnology. 2012, Vol 11, Num 3, pp 611-618, issn 1536-125X, 8 p.Article

Switching mechanisms in microscale memristorsPRODROMAKIS, T; MICHELAKIS, K; TOUMAZOU, C et al.Electronics letters. 2010, Vol 46, Num 1, pp 63-65, issn 0013-5194, 3 p.Article

  • Page / 69